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PD - 94239E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level RDS(on) IRHE57034 100K Rads (Si) 0.08 IRHE53034 300K Rads (Si) 0.08 IRHE54034 IRHE58034 500K Rads (Si) 1000K Rads (Si)
TM
IRHE57034 JANSR2N7495U5 60V, N-CHANNEL
REF: MIL-PRF-19500/700
5
TECHNOLOGY
ID 11.7A 11.7A 11.7A 11.7A
QPL Part Number JANSR2N7495U5 JANSF2N7495U5 JANSG2N7495U5 JANSH2N7495U5
0.08 0.1
LCC-18
International Rectifier's R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 11.7 7.4 46.8 25 0.2 20 87 11.7 2.5 3.4 -55 to 150 300 (for 5s) 0.42 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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1
04/27/06
IRHE57034, JANSR2N7495U5
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 2.0 7.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.058 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.1 -- -- 0.08 4.0 -- 10 25 100 -100 45 15 20 25 100 35 30 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA V GS = 12V, ID = 7.4A A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.4A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 11.7A VDS = 30V VDD = 30V, ID = 11.7A, VGS =12V, RG = 7.5
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1250 520 16
-- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 11.7 46.8 1.8 125 420
Test Conditions
A
V ns nC Tj = 25C, IS = 11.7A, VGS = 0V A Tj = 25C, IF = 11.7A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB RthJA Junction-to-Case Junction-to-PC board Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 19 75 5.0 -- --
C/W
Test Conditions
soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHE57034, JANSR2N7495U5
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source A On-State Resistance (TO-3) Static Drain-to-Source A On-State Resistance (LCC-18) Diode Forward Voltage A Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 -- -- -- -- -- -- -- 4.0 100 -100 10 0.034 0.08 1.8 60 1.5 -- -- -- -- -- -- -- 4.0 100 -100 25 0.043 0.1 1.8 V nA A V
Test Conditions
VGS = 0V, I D = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 48V, VGS =0V VGS = 12V, ID =7.4A VGS = 12V, ID =7.4A VGS = 0V, IS = 11.7A
1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5) 2. Part number IRHE58064 (JANSH2N7495U5)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br Xe Au LET (MeV/(mg/cm2)) 37.3 63 86.6 Energy (MeV) 285 300 2068 VDS (V) Range (m) @VGS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V 36.8 60 60 60 60 40 29 46 46 35 25 15 106 35 35 27 20 14
70 60 50 40 30 20 10 0 0 -5 -10 VGS -15 -20
VDS
Br Xe Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE57034, JANSR2N7495U5
Pre-Irradiation
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
5.0V
5.0V
1 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
12A ID = 11.7A
I D , Drain-to-Source Current (A)
TJ = 150 C
1.5
10
1.0
TJ = 25 C
0.5
1 5.0
V DS = 25V 15 20s PULSE WIDTH 6.0 7.0 8.0 9.0
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHE57034, JANSR2N7495U5
3000
2400
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 11.7A 12A VDS = 48V VDS = 30V VDS = 12V
16
C, Capacitance (pF)
Ciss
1800
12
Coss
1200
8
600
Crss
4
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT SEE FIGURE 13
30 40 50
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
10
TJ = 150 C
ID, Drain-to-Source Current (A)
100s
10
TJ = 25 C
1
1ms
Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V)
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
10ms
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHE57034, JANSR2N7495U5
Pre-Irradiation
12
VDS VGS RG
RD
10
D.U.T.
+
ID , Drain Current (A)
8
-V DD
VGS
6
Pulse Width 1 s Duty Factor 0.1 %
4
Fig 10a. Switching Time Test Circuit
VDS 90%
2
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
1
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHE57034, JANSR2N7495U5
EAS , Single Pulse Avalanche Energy (mJ)
200
15V
160
ID 5.2A 7.4A BOTTOM 11.7A TOP
VDS
L
DRIVER
120
RG
D.U.T.
IAS tp
+ - VDD
A
80
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
40
0 25 50 75 100 125 150
V(BR)DSS tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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7
IRHE57034, JANSR2N7495U5
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 1.27mH Peak IL = 11.7A, VGS = 12V A ISD 11.7A, di/dt 220A/s, VDD 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- LCC-18
PAD ASSIGNMENTS G = GATE D = DRAIN S = SOURCE NC = NO CONNECTION
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006
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